etching rate造句
例句與造句
- more often, all of the materials exposed to the etchant have a finite etch rate .
通常，所有暴露在刻蝕劑中的材料都具有一定的刻蝕速率。 - a study on etch rate of dry technique for hgcdte irfpas
焦平面探測(cè)陣列干法技術(shù)的刻蝕速率研究 - temperature influence on etching rate of si deep trench using icp with sf6 o
刻蝕硅深槽基片溫度對(duì)刻蝕速率的影響 - influence of process parameters on the etching rate in inductively coupled plasma etcher
等離子體刻蝕中工藝參數(shù)對(duì)刻蝕速率影響的研究 - testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium-dioxid coating; optical method
半導(dǎo)體工藝材料的檢驗(yàn).蝕刻混合劑浸蝕率的測(cè)定.第2部 - It's difficult to find etching rate in a sentence. 用etching rate造句挺難的
- testing of materials for semiconductor technology-determination of etch rates of etching mixtures-part 3 : aluminium, gravimetric method
半導(dǎo)體技術(shù)試驗(yàn).蝕刻混合劑浸蝕率測(cè)定.第3部分:鋁.測(cè) - testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium monocrystals; gravimetric method
半導(dǎo)體工藝材料的檢驗(yàn).蝕刻混合劑浸蝕率的測(cè)定.第1部 - the results show that amorphous carbon films have high etching resistance against oxygen plasma, and etch rates of the films correlated not only with etching processing parameters, also with deposition conditions
結(jié)果表明非晶碳膜對(duì)于氧離子體具有高的抗刻蝕性，其刻蝕率不僅與刻蝕的過(guò)程參量有關(guān)，而且決定于膜的沉積條件。 - poles-etching method is that the etching current caused by the external voltage is used to promote the intermediate ion product break away from the surface of substrate and keep the etching rate stable
電極腐蝕法是指在激光腐蝕的過(guò)程中,通過(guò)外加電壓在溶液中形成腐蝕電流,促使中間離子產(chǎn)物脫離基片表面,使腐蝕持續(xù)穩(wěn)定進(jìn)行。 - to find out the effective slurry with suitable type of oxidizer and concentration, chemical etching experiment was applied to the litao3 wafer . the chemical etching effects were analysed by measuring etching rate and x-ray spectrum
采用化學(xué)腐蝕實(shí)驗(yàn)方法研究拋光液中氧化劑種類和濃度以及拋光液ph值對(duì)鉭酸鋰晶片化學(xué)去除的影響。 - furthermore, the etching rate, roughness versus incident laser fluences and pulse number are investigated theoretically and experimentally in detail by 3d surface analyzer . then a new priciple of pmma etched by excimer laser is given : the process is the interaction result of photodecomposition,
隨后應(yīng)用總結(jié)出的優(yōu)化加工參數(shù)在該材料上刻蝕出了寬104m,深56m,矩形度高達(dá)80%,底面光滑的20個(gè)循環(huán)的pcr微流控芯片。 - the optimizing methods of main etching parameters, such as etching rate, uniformity and selectivity, were investigated by the orthogonal experiment, and these results can be used for setting main process parameters, adjusting them with a drifting from desired conditions, and optimizing etching selectivity
應(yīng)用正交實(shí)驗(yàn)，進(jìn)行了蝕刻速率、均勻性、選擇比等主要蝕刻參數(shù)的優(yōu)化，得出主要工藝參數(shù)的設(shè)置方法和理想條件漂移時(shí)的調(diào)整方法以及優(yōu)化選擇比的蝕刻方案。 - a varying-temperature etching method for fiber tip preparing was proposed, with which fiber tips with cone angle as large as 35-52 degree could be routinely made . to explore the mechanism of varying-temperature method the changing of the diameter of a fiber during etching process was carefully measured and an experiential formula was found . it reveals that the etching rate of fiber keeps constant until the diameter reduces to a certain amount, which explained the large cone angle obtainable with varying-temperature method
在光纖探針制作方面，本論文提出了一種變溫腐蝕制備光纖探針的新方法，獲得了3552度的大錐角光纖探針；進(jìn)一步對(duì)光纖探針腐蝕成形過(guò)程進(jìn)行定量研究，發(fā)現(xiàn)當(dāng)光纖直徑腐蝕減小到一定程度以后，腐蝕速度隨直徑變小而加快；通過(guò)對(duì)多次實(shí)驗(yàn)結(jié)果進(jìn)行擬合，得出了光纖直徑隨腐蝕時(shí)間變化的定量經(jīng)驗(yàn)公式；借助該經(jīng)驗(yàn)公式從理論上定量模擬了變溫法獲得大錐角針尖的過(guò)程。 - process parameters related to the film quality are discussed; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied, since the etching process can be controlled by the ph value
3.初步研究了利用pecvd淀積si3n4薄膜的工藝,討論了影響薄膜質(zhì)量的相關(guān)工藝參數(shù);初步研究了用icp刻蝕sio2和cr的相關(guān)工藝;通過(guò)分析不同濃度tmah腐蝕液在不同溫度下其ph值的變化,研究了以溶液ph值作為腐蝕溶液的控制參數(shù)。 - the feasibility that kaufman ion source is applied in reactive ion beam etching is discussed . etching characteristics of materials, including pr, cr, quartz, are investigated . the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively . the etch rate has shown a square root dependence on variation versus
深入研究了光刻膠、鉻薄膜、石英等光學(xué)材料離子束刻蝕特性,分別以ar氣和chf3為工作氣體,研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量,束流密度和離子入射角度的變化關(guān)系,得到刻蝕速率與影響因素的擬合方程,為掩模的制作工藝路線提供了實(shí)驗(yàn)依據(jù)和理論指導(dǎo)。
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